IKW40N65H5FKSA1, БТИЗ транзистор, 40 А, 1.65 В, 255 Вт

Характеристики

IKW40N65H5FKSA1, БТИЗ транзистор, 40 А, 1.65 В, 255 Вт The IKW40N65H5 is a High Speed IGBT in TRENCHSTOP™ 5 technology co-packed with RAPID 1 fast and soft anti-parallel diode. The TRENCHSTOP™ 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. It features best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.

• Factor 2.5 lower Qg
• Factor 2 reduction in switching losses
• Low COES/EOSS
• Mild positive temperature coefficient VCE (sat)
• Temperature stability of Vf
• Higher power density design
• 200mV Reduction in VCE (sat)
• 50V Increase in the bus voltage possible without compromising reliability
• Green product
• Halogen-free

Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные