IRL2910SPBF, МОП-транзистор, N Канал, 29 А, 100 В, 26 мОм

Характеристики

IRL2910SPBF, МОП-транзистор, N Канал, 29 А, 100 В, 26 мОм The IRL2910SPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

• Logic level gate drive
• Advanced process technology
• Dynamic dV/dt rating
• Fully avalanche rating

Полупроводники — ДискретныеТранзисторыМОП-транзисторы