Характеристики
IXYX100N120B3, БТИЗ транзистор, 225 А, 2.2 В, 1.15 кВт IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные