Характеристики
NX2301P, МОП-транзистор, P Канал, -2 А, -20 В, 0.1 Ом The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
• 1.8V RDSon rated for Low Voltage Gate Drive
• Very Fast Switching
• AEC-Q101 Qualified
Полупроводники — ДискретныеТранзисторыМОП-транзисторы