Характеристики
SI1424EDH-T1-GE3, МОП-транзистор, N Канал, 4 А, 20 В The SI1424EDH-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switching and battery switch applications.
• 4000V ESD performance
• 100% Rg tested
• -55 to 150 C Operating temperature range
• Halogen-free
Полупроводники — ДискретныеТранзисторыМОП-транзисторы